Samsung previews zHBM stacking memory atop AI accelerators
Samsung previewed zHBM, which vertically stacks high-bandwidth memory directly on AI accelerators, plus zNAND-O built on V-NAND. The designs aim to cut distance between compute and memory to improve performance and power efficiency for next-gen AI chips.
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Original reporting: Samsung previews zHBM, which vertically stacks HBM atop AI accelerators, and zNAND-O, built on V-NAND, and unveils the industry's first V10 BV-NAND architecture (Yoolim Lee/Bloomb…